| DDR5 |
| DDR5-4800 4Gx4 (16Gb) |
MT60B4G4HB-48B:A |
Micron |
|
|
| DDR5-4800 2Gx8 (16Gb) |
MT60B2G8HB-48B:A |
Micron |
|
|
| DDR5-4800 1Gx16 (16Gb) |
MT60B1G16HC-48B:A |
Micron |
|
|
| DDR4 |
| DDR4-3200 512Mx16 (8Gb) |
H5AN8G6NDJR-XNC |
SK hynix |
|
|
| DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BCWE |
Samsung |
|
|
| DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BIWE |
Samsung |
|
|
| DDR4-3200 512Mx16 (8Gb) Ind |
MT40A512M16LY-062E IT:E |
Micron |
|
|
| DDR4-3200 512Mx16 (8Gb) |
MT40A512M16TB-062E:J |
Micron |
|
|
| DDR4-3200 512Mx16 (8Gb) |
MT40A512M16TB-062E:R |
Micron |
|
|
| DDR4-3200 4Gx4 (16Gb) |
MT40A4G4JC-062E:E |
Micron |
|
|
| DDR4-3200 4Gx4 (16Gb) |
MT40A4G4SA-062E:F |
Micron |
|
|
| DDR4-3200 2Gx8 (16Gb) |
MT40A2G8VA-062E:B |
Micron |
|
|
| DDR4-3200 2Gx8 (16Gb) |
MT40A2G8SA-062E:F |
Micron |
|
|
| DDR4-3200 2Gx8 (16Gb) |
MT40A2G8JE-062E AAT:E |
Micron |
|
|
| DDR4-3200 2Gx4 (8Gb) |
MT40A2G4SA-062E:J |
Micron |
|
|
| DDR4-3200 2Gx4 (8Gb) |
MT40A2G4SA-062E:R |
Micron |
|
|
| DDR4-3200 256Mx16 (4Gb) Ind |
MT40A256M16LY-062E IT:F |
Micron |
|
|
| DDR4-3200 1Gx16 (16Gb) |
H5ANAG6NCJR-XNC |
SK hynix |
|
|
| DDR4-3200 1Gx16 (16Gb) Ind |
MT40A1G16RC-062E IT:B |
Micron |
|
|
| DDR4-3200 1Gx16 (16Gb) |
MT40A1G16TB-062E:F |
Micron |
|
|
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD |
Samsung |
|
|
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BITD |
Samsung |
|
|
| DDR4-2666 512MX16 (8Gb) |
MT40A512M16LY-075:E |
Micron |
|
|
| DDR4-2666 256Mx16 (4Gb) |
K4A4G165WF-BCTD |
Samsung |
|
|
| DDR4-2666 1Gx8 (8Gb) |
K4A8G085WC-BCTD |
Samsung |
|
|
| DDR4-2666 1Gx8 (8Gb) |
K4A8G085WC-BITD |
Samsung |
|
|
| DDR4-2666 1Gx16 (16Gb) |
K4AAG165WA-BCTD |
Samsung |
|
|
| DDR4-2400 512Mx8 (4Gb) Ind |
MT40A512M8RH-083E IT:B |
Micron |
|
|
| DDR4-2400 512Mx8 (4Gb) |
MT40A512M8RH-083E:B |
Micron |
|
|
| DDR4-2400 512Mx16 (8Gb) |
H5AN8G6NAFR-UHC |
SK hynix |
|
|
| DDR4-2400 512Mx16 (8Gb) |
K4A8G165WB-BIRC |
Samsung |
|
|
| DDR4-2400 256Mx16 (4Gb) |
H5AN4G6NBJR-UHC |
SK hynix |
|
|
| DDR4-2400 256Mx16 (4Gb) |
K4A4G165WE-BCRC |
Samsung |
|
|
| DDR4-2400 1Gx8 (8Gb) Ind |
MT40A1G8WE-083E IT:B |
Micron |
|
|
| DDR3 |
| DDR3-1600 256Mx16 (4Gb) Ind 1.35V |
MT41K256M16HA-125 IT:E |
Micron |
|
|
| DDR3-1600 128Mx16 (2Gb) |
MT41J128M16JT-125:K |
Micron |
|
|
| DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
MT41K128M16JT-125 AIT:K |
Micron |
|
|
| DDR3-1600 128Mx16 (2Gb) |
MT41K128M16JT-125:K |
Micron |
|
|
| DDR3-1600 256Mx8 (2Gb) 1.35V |
MT41K256M8DA-125:K |
Micron |
|
|
| DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
NT5CC128M16IP-DII |
Nanya |
|
|
| DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-125 IT:K |
Micron |
|
|
| DDR3-2133 512Mx8 (4Gb) |
NT5CB512M8EQ-FL |
Nanya |
|
|
| DDR3-2133 256Mx16 (4Gb) |
K4B4G1646E-BCNB |
Samsung |
|
|
| DDR3-2133 128Mx16 (2Gb) |
K4B2G1646F-BCNB |
Samsung |
|
|
| DDR3-1866 64Mx16 (1Gb) 1.35V |
MT41K64M16TW-107:J |
Micron |
|
|
| DDR3-1866 512Mx8 (4Gb) AutoG 1.35V |
K4B4G0846R-BYMA |
Samsung |
|
|
| DDR3-1866 512Mx8 (4Gb) 1.35V |
MT41K512M8DA-107:P |
Micron |
|
|
| DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
MT41K512M16VRN-107 IT:P |
Micron |
|
|
| DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
K4B4G1646E-BMMA |
Samsung |
|
|
| DDR3-1866 256Mx16 (4Gb) AutoG 1.35V |
K4B4G1646D-BHMA |
Samsung |
|
|
| DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646D-BYMA |
Samsung |
|
|
| DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
|
|
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 AIT:P |
Micron |
|
|
| DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
MT41K256M16TW-107 IT:P |
Micron |
|
|
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
|
|
| DDR3-1866 256Mx16 (4Gb) |
H5TQ4G63EFR-RDC |
SK hynix |
|
|
| DDR3-1866 256Mx16 (4Gb) |
K4B4G1646E-BCMA |
Samsung |
|
|
| DDR3-1866 128Mx8 (1Gb) 1.35V |
MT41K128M8DA-107:J |
Micron |
|
|
| DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
K4B2G1646F-BMMA |
Samsung |
|
|
| DDR3-1866 128Mx16 (2Gb) AutoG 1.35V |
K4B2G1646F-BHMA |
Samsung |
|
|
| DDR3-1866 128Mx16 (2Gb) 1.35V |
NT5CC128M16JR-EK |
Nanya |
|
|
| DDR3-1866 128Mx16 (2Gb) 1.35V |
W632GU6NB-11 |
Winbond |
|
|
| DDR3-1600 64Mx16 (1Gb) |
H5TQ1G63EFR-PBC |
SK hynix |
|
|
| DDR2 |
| DDR2-800 32Mx16 |
MT47H32M16NF-25E:H |
Micron |
|
|
| DDR2-800 256Mx8 (2Gb) |
MT47H256M8EB-25E:C |
Micron |
|
|
| DDR2-800 128Mx8 Pb-Free |
K4T1G084QJ-BCE7 |
Samsung |
|
|
| DDR2-800 128Mx16 (2Gb) |
MT47H128M16RT-25E:C |
Micron |
|
|
| DDR2-800 128Mx16 (2Gb) Ind |
MT47H128M16RT-25E IT:C |
Micron |
|
|
| DDR2-800 64Mx16 Pb-Free |
K4T1G164QJ-BCF7 |
Samsung |
|
|
| DDR2-800 64Mx16 FBGA |
MT47H64M16NF-25E:M |
Micron |
|
|
| DDR2-800 64Mx8 |
MT47H64M8SH-25E:H |
Micron |
|
|
| DDR2-800 32Mx16 (512Mb) Ind |
MT47H32M16NF-25E IT:H |
Micron |
|
|
| DDR2-800 64Mx16 (1Gb) Ind |
MT47H64M16NF-25E IT:M |
Micron |
|
|
| LPDDR5 |
| LPDDR5-6400 (128Gb) |
K3LK7K70BM-BGCP |
Samsung |
|
|
| LPDDR4 |
| LPDDR4X-4266 x64 (64Gb) |
K3UH7H70AM-AGCL |
Samsung |
|
|
| LPDDR4X-4266 x32 (64Gb) |
K4UCE3Q4AA-MGCL |
Samsung |
|
|
| LPDDR4X-4266 x64 (48Gb) |
K3UH6H60BM-AGCL |
Samsung |
|
|
| LPDDR4X-4266 1Gx32 (32Gb) |
K4UBE3D4AA-MGCL |
Samsung |
|
|
| LPDDR4X-4266 x32 (32Gb) |
K4UBE3D4AA-MGCR |
Samsung |
|
|
| LPDDR4-3733 1Gx32 (32Gb) |
MT53D1024M32D4DT-053 WT:D |
Micron |
|
|
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2FW-046 AUT:A |
Micron |
|
|
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2NP-046 WT:A |
Micron |
|
|
| LPDDR4X-4266 x32 (16Gb) |
K4U6E3S4AA-MGCR |
Samsung |
|
|
| LPDDR4-4266 512Mx32 (16Gb) |
MT53D512M32D2DS-046 AAT:D |
Micron |
|
|
| LPDDR4-3733 512Mx32 (16Gb) |
MT53D512M32D2DS-053 AIT:D |
Micron |
|
|
| LPDDR4-3733 256Mx32 (8Gb) |
K4F8E304HB-MGCJ |
Samsung |
|
|
| LPDDR4-4266 256Mx32 (8Gb) |
K4F8E3S4HD-MGCL |
Samsung |
|
|
| LPDDR4-3733 128Mx32 (4Gb) DDP |
H9HCNNN4KUMLHR-NME |
SK hynix |
|
|
| LPDDR4-4266 2Gx32 (64Gb) QDP |
MT53E2G32D4DT-046 AIT:A |
Micron |
|
|
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2FW-046 WT:B |
Micron |
|
|
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2FW-046 AAT:B |
Micron |
|
|
| LPDDR4X-4266 x64 (64Gb) |
K3UH7H70BM-AGCL |
Samsung |
|
|
| LPDDR4-4266 512Mx16 (8Gb) Ind |
MT53D512M16D1DS-046 IT:D |
Micron |
|
|
| LPDDR4 16G DIE 1Gx16 (16Gb) |
MT53D1G16D1Z32MWC1 |
Micron |
|
|
| LPDDR3 |
| LPDDR3-1866 512Mx64 (32Gb) |
MT52L512M64D4PQ-107 WT:B |
Micron |
|
|
| LPDDR3-2133 (16Gb) |
K4E6E304ED-EGCG |
Samsung |
|
|
| Mobile/Low-Power DDR (LPDDR) |
| LPDDR-400 64Mx8 Pb-Free |
MT46V64M8P-5B:J |
Micron |
|
|
| LPDDR-400 32Mx16 TSOP Pb-Free |
MT46V32M16P-5B:J |
Micron |
|
|
| LPDDR-400 32Mx32 (1Gb) Ind |
MT46H32M32LFB5-5 IT:B |
Micron |
|
|
| LPDDR-333 16Mx32 VFBGA Low Power |
MT46H16M32LFB5-5 IT:C |
Micron |
|
|