31 years experience in electronic parts - NX Electronics Limited (Nextron)

  • 11F, Trust Centre
    Kowloon, Hong Kong
  • Opening Time
    Mon - Fri: 09:00 to 18:00
Description Part No. Brand Remarks
DRAM
DDR5
DDR5-4800 1Gx16 (16Gb) K4RAH165VB-BCQK Samsung
DDR4
DDR4-3200 512Mx16 (8Gb) H5AN8G6NDJR-XNC SK hynix
DDR4-3200 512Mx16 (8Gb) MT40A512M16TB-062E:R Micron
DDR4-3200 2Gx8 (16Gb) MT40A2G8SA-062E:F Micron
DDR4-3200 1Gx8 (8Gb) MT40A1G8SA-062E:R Micron
DDR4-3200 1Gx16 (16Gb) Ind MT40A1G16KD-062E IT:E Micron
DDR4-3200 1Gx16 (16Gb) MT40A1G16TB-062E:F Micron
DDR4-2666 512Mx16 (8Gb) H5AN8G6NCJR-VKC SK hynix
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BCTD Samsung
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BITD Samsung
DDR4-2666 256Mx16 (4Gb) H5AN4G6NBJR-VKC SK hynix
DDR4-2666 256Mx16 (4Gb) K4A4G165WF-BCTD Samsung
DDR4-2666 1Gx8 (8Gb) K4A8G085WC-BCTD Samsung
DDR4-2666 1Gx16 (16Gb) K4AAG165WA-BCTD Samsung
DDR4-2400 256Mx16 (4Gb) K4A4G165WE-BIRC Samsung
DDR3
DDR3-2133 256Mx16 (4Gb) K4B4G1646E-BCNB000 Samsung
DDR3-2133 512Mx8 (4Gb) 1.35V MT41K512M8DA-093:P Micron
DDR3-2133 512Mx8 (4Gb) K4B4G0846E-BCNB Samsung
DDR3-2133 256Mx16 (4Gb) H5TQ4G63EFR-TEC SK hynix
DDR3-2133 256Mx16 (4Gb) K4B4G1646E-BCNB Samsung
DDR3-2133 128Mx16 (2Gb) K4B2G1646F-BCNB Samsung
DDR3-2133 128Mx16 (2Gb) MT41J128M16JT-093:K Micron
DDR3-1866 64Mx16 (1Gb) 1.35V MT41K64M16TW-107 AIT:J Micron
DDR3-1866 512Mx16 (8Gb) Ind 1.35V MT41K512M16VRP-107 IT:P Micron
DDR3-1866 256Mx16 (4Gb) 1.35V MT41K256M16TW-107:P Micron
DDR3-1866 1Gx8 (8Gb) 1.35V MT41K1G8RKB-107:P Micron
DDR2
DDR2-800 32Mx16 Pb-Free Halogen-Free K4T51163QN-BCE7 Samsung
DDR2-800 32Mx16 (512Mb) BGA NT5TU32M16FG-AC Nanya
DDR2-800 128Mx8 Pb-Free K4T1G084QJ-BCE7 Samsung
DDR2-800 64Mx8 Pb-Free Halogen-Free K4T51083QN-BCE7 Samsung
DDR2-667 64Mx8 H5PS5182KFR-Y5C SK hynix
DDR2-400 64MX16 FBGA Ind MT47H64M16NF-25E AAT:M Micron
DDR2-800 64Mx16 (1Gb) Auto MT47H64M16NF-25E AIT:M Micron
LPDDR5
LPDDR5X-8533 (96Gb) H58GG6AK8HX094N SK hynix
LPDDR4
LPDDR4-4266 (32Gb) H9HCNNNCPUMLXR-NEE SK hynix
LPDDR4-3733 512Mx32 (16Gb) K4F6E3S4HM-MGCJ Samsung
LPDDR4-4266 512Mx32 (16Gb) MT53D512M32D2DS-046 AAT:D Micron
LPDDR4-4266 1Gx32 (32Gb) MT53E1G32D2FW-046 AAT:B Micron
LPDDR4X-4266 (8Gb/1GB) H54G36AYRBX257N SK hynix
Mobile/Low-Power DDR (LPDDR)
LPDDR-400 16Mx16 Ind MT46V16M16CY-5BIT:K Micron
LPDDR-400 64Mx16 (1Gb) Ind MT46H64M16LFBF-5 IT:B Micron
LPDDR-400 32Mx16 TSOP Pb-Free MT46V32M16P-5B IT:J Micron
GDDR6 SDRAM/SGRAM
GDDR6 16Gb/s 512Mx32 (16Gb) K4ZAF325BC-SC16 Samsung
Extended Data Output (EDO)
EDO 1Mx16-50 5V SOJ (16Mb) IS41C16100C-50KLI ISSI
Mobile SDRAM (LPSDR)
SD-166 16Mx16 IT MT48LC16M16A2P-6A IT Micron
SD-166 16Mx16 IT MT48LC16M16A2P-6A IT:G Micron
SD-166 16Mx16 XIT MT48LC16M16A2P-6A XIT:G Micron
SDRAM PC166
SD-166 16Mx16 (256Mb) Pb-Free Ind W9825G6KH-6I Winbond