|
DRAM
|
|
DDR4
|
| DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BCWE |
Samsung |
|
| DDR4-3200 2Gx8 (16Gb) |
K4AAG085WA-BCWE |
Samsung |
|
| DDR4-3200 2Gx8 (16Gb) |
MT40A2G8SA-062E:F |
Micron |
|
| DDR4-3200 256Mx16 (4Gb) |
MT40A256M16LY-062E AAT:F |
Micron |
|
| DDR4-3200 1Gx8 (8Gb) Ind |
MT40A1G8SA-062E IT:E |
Micron |
|
| DDR4-3200 1Gx8 (8Gb) |
H5AN8G8NDJR-XNC |
SK hynix |
|
| DDR4-3200 1Gx8 (8Gb) |
K4A8G085WC-BCWE |
Samsung |
|
| DDR4-3200 1Gx8 (8Gb) |
MT40A1G8SA-062E:E |
Micron |
|
| DDR4-3200 1Gx16 (16Gb) |
H5ANAG6NCJR-XNC |
SK hynix |
|
| DDR4-3200 1Gx16 (16Gb) |
K4AAG165WA-BCWE |
Samsung |
|
| DDR4-3200 1Gx16 (16Gb) |
MT40A1G16TB-062E:F |
Micron |
|
| DDR4-3200 1Gx16 (16Gb) |
K4AAG165WA-BCWE000 |
Samsung |
|
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD |
Samsung |
|
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BITD |
Samsung |
|
| DDR4-2666 512MX16 (8Gb) |
MT40A512M16LY-075:E |
Micron |
|
| DDR4-2666 256Mx16 (4Gb) |
K4A4G165WF-BCTD |
Samsung |
|
| DDR4-2666 1Gx8 (8Gb) |
K4A8G085WC-BCTD |
Samsung |
|
| DDR4-2666 1Gx16 (16Gb) DDP |
K4AAG165WB-MCTD |
Samsung |
|
| DDR4-2400 512Mx8 (4Gb) |
MT40A512M8RH-083E:B |
Micron |
|
| DDR4-2400 256Mx16 (4Gb) |
MT40A256M16GE-083E:B |
Micron |
|
| DDR4-3200 2Gx8 (16Gb) Ind |
MT40A2G8SA-062E IT:F |
Micron |
|
| DDR4-3200 2Gx16 (32Gb) |
MT40A2G16TBB-062E:F |
Micron |
|
| DDR4-3200 512Mx16 (8Gb) |
H5AG36EXNJX017N |
SK hynix |
|
|
DDR3
|
| DDR3-1600 512Mx16 (8Gb) Ind 1.35V |
MT41K512M16HA-125 IT:A |
Micron |
|
| DDR3-1600 256Mx16 (4Gb) 1.35V |
NT5CC256M16DP-DI |
Nanya |
|
| DDR3-1600 128Mx16 (2Gb) 1.35V |
NT5CC128M16IP-DI |
Nanya |
|
| DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
W632GU6NB-12I |
Winbond |
|
| DDR3-2133 128Mx16 (2Gb) |
K4B2G1646F-BCNB |
Samsung |
|
| DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
MT41K512M8DA-107 IT:P |
Micron |
|
| DDR3-1866 512Mx8 (4Gb) 1.35V |
NT5CC512M8EN-EK |
Nanya |
|
| DDR3-1866 256Mx8 (2Gb) 1.35V |
K4B2G0846F-BYMA |
Samsung |
|
| DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
K4B4G1646E-BMMA |
Samsung |
|
| DDR3-1866 256Mx16 (4Gb) 1.35V Ind |
NT5CC256M16ER-EKI |
Nanya |
|
| DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
|
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 AAT:P |
Micron |
|
| DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
MT41K256M16TW-107 IT:P |
Micron |
|
| DDR3-1866 1Gx8 (8Gb) 1.35V |
MT41K1G8RKB-107:P |
Micron |
|
| DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
K4B2G1646F-BMMA |
Samsung |
|
| DDR3-1866 128Mx16 (2Gb) Ind |
NT5CC128M16JR-EKI |
Nanya |
|
| DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-107 IT:K |
Micron |
|
| DDR3-1866 128Mx16 (2Gb) |
NT5CB128M16IP-EK |
Nanya |
|
| DDR3-2133 512Mx8 (4Gb) 1.35V |
NT5CC512M8EQ-FL |
Nanya |
|
|
DDR2
|
| DDR2-800 64Mx16 Pb-Free |
K4T1G164QJ-BCE7 |
Samsung |
|
| DDR2-800 64Mx16 FBGA |
MT47H64M16NF-25E:M |
Micron |
|
| DDR2-800 64Mx16 (1Gb) Ind |
MT47H64M16NF-25E IT:M |
Micron |
|
|
LPDDR5
|
| LPDDR5-6400 x32 (32Gb) |
K3LKBKB0BM-MGCP |
Samsung |
|
| LPDDR5-6400 x32 (64Gb) |
K3LKCKC0BM-MGCP |
Samsung |
|
| LPDDR5-8533 2Gx64 (128Gb) FBGA |
MT62F2G64D8CL-023 WT:B |
Micron |
|
|
LPDDR4
|
| LPDDR4X-4266 x32 (32Gb) |
H9HCNNNCPMMLXR-NEE |
SK hynix |
|
| LPDDR4-3733 1Gx32 (32Gb) |
K4FBE3D4HM-MGCJ |
Samsung |
|
| LPDDR4X-4266 1Gx32 (32Gb) |
K4UBE3D4AA-MGCL |
Samsung |
|
| LPDDR4-4266 1Gx32 (32Gb) |
MT53D1024M32D4DT-046 AIT:D |
Micron |
|
| LPDDR4-3733 512Mx64 (32Gb) |
MT53D512M64D4RQ-053 WT:E |
Micron |
|
| LPDDR4-4266 (16Gb) |
H9HCNNNBKUMLXR-NEE |
SK hynix |
|
| LPDDR4-3733 512Mx32 (16Gb) |
K4F6E3S4HM-MGCJ |
Samsung |
|
| LPDDR4-4266 512Mx32 (16Gb) |
MT53E512M32D1ZW-046 WT:B |
Micron |
|
| LPDDR4-4266 256Mx32 (8Gb) |
K4F8E3S4HD-MGCL |
Samsung |
|
| LPDDR4-4266 512Mx32 (16Gb) Ind |
MT53E512M32D1ZW-046 IT:B |
Micron |
|
| LPDDR4X-4266 x64 (64Gb) |
K3UH7H70BM-AGCL |
Samsung |
|
| LPDDR4X-4266 x64 (96Gb) |
K3UHAHA0BM-AGCL |
Samsung |
|
| LPDDR4-3733 512Mx32 (16Gb) |
K4F6E3S4HM-MGCJT |
Samsung |
|
|
LPDDR3
|
| LPDDR3-1866 512Mx32 (16Gb) |
MT52L512M32D2PF-107 WT:B |
Micron |
|
|
High Bandwidth Memory (HBM)
|
| HBM2E 3.6Gb/s 16GB |
KHAA84901B-JC17 |
Samsung |
|
|
GDDR6 SDRAM/SGRAM
|
| GDDR6 256Mx32 (8Gb) |
MT61K256M32JE-19G:T |
Micron |
|
| GDDR6 21Gb/s 256Mx32 (8Gb) |
MT61K256M32JE-21:T |
Micron |
|
| GDDR6 16Gb/s 512Mx32 (16Gb) |
K4ZAF325BC-SC16 |
Samsung |
|
| GDDR6 20Gb/s 512Mx32 (16Gb) |
K4ZAF325BC-SC20 |
Samsung |
|
| GDDR6 512Mx32 (16Gb) |
MT61K512M32KPA-16:C |
Micron |
|
| GDDR6 14Gb/s 512Mx32 (16Gb) |
MT61K512M32KPA-14:C |
Micron |
|
|
Mobile SDRAM (LPSDR)
|
| SD 4Mx32 PC166 |
MT48LC4M32B2P-6A IT:L |
Micron |
|
| SD 8Mx16-75 166MHz VFBGA |
MT48LC8M16A2B4-6A IT:L |
Micron |
|
| SD 2Mx32-6 166MHz |
MT48LC2M32B2P-6A IT:J |
Micron |
|
|
SDRAM PC166
|
| SD-166 16Mx16 (256Mb) Ind |
IS42S16160J-6TLI |
ISSI |
|
|
Synchronous Dynamic RAM (SDRAM)
|
| SD-143 16Mx16 (256Mb) |
IS42S16160J-7TLI |
ISSI |
|
