31 years experience in electronic parts - NX Electronics Limited (Nextron)

  • 11F, Trust Centre
    Kowloon, Hong Kong
  • Opening Time
    Mon - Fri: 09:00 to 18:00
Description Part No. Brand Remarks
DRAM
DDR4
DDR4-3200 512Mx8 (4Gb) K4A4G085WF-BCWE Samsung
DDR4-3200 512Mx16 (8Gb) K4A8G165WC-BCWE Samsung
DDR4-3200 512Mx16 (8Gb) MT40A512M16TB-062E:R Micron
DDR4-3200 2Gx8 (16Gb) H5ANAG8NCJR-XNC SK hynix
DDR4-3200 2Gx8 (16Gb) Ind MT40A2G8JC-062E IT:E Micron
DDR4-3200 2Gx8 (16Gb) MT40A2G8SA-062E:F Micron
DDR4-3200 1Gx8 (8Gb) Ind MT40A1G8SA-062E IT:E Micron
DDR4-3200 1Gx8 (8Gb) K4A8G085WC-BCWE Samsung
DDR4-3200 1Gx8 (8Gb) MT40A1G8SA-062E:E Micron
DDR4-3200 1Gx8 (8Gb) MT40A1G8SA-062E:R Micron
DDR4-3200 1Gx16 (16Gb) MT40A1G16TB-062E:F Micron
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BCTD Samsung
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BITD Samsung
DDR4-2666 256Mx16 (4Gb) H5AN4G6NBJR-VKCR SK hynix
DDR4-2666 256Mx16 (4Gb) K4A4G165WC-BCTD Samsung
DDR4-2666 256Mx16 (4Gb) K4A4G165WF-BCTD Samsung
DDR4-2400 256Mx16 (4Gb) K4A4G165WE-BIRC Samsung
DDR4-3200 2Gx8 (16Gb) Ind MT40A2G8SA-062E IT:F Micron
DDR4-3200 2Gx16 (32Gb) MT40A2G16TBB-062E:F Micron
DDR4-3200 1Gx8 (8Gb) Ind MT40A1G8SA-062E IT:R Micron
DDR3
DDR3-1600 1Gx8 (8Gb) Ind 1.35V MT41K1G8SN-125 IT:A Micron
DDR3-1600 512Mx16 (8Gb) 1.35V MT41K512M16HA-125:A Micron
DDR3-1600 256Mx16 (4Gb) 1.35V H5TC4G63CFR-PBA SK hynix
DDR3-1600 256Mx16 (4Gb) K4B4G1646D-BCK0 Samsung
DDR3-2133 256Mx16 (4Gb) K4B4G1646E-BCNB000 Samsung
DDR3-1600 128Mx16 1.5V (2Gb) K4B2G1646E-BCK0 Samsung
DDR3-1600 128Mx16 (2Gb) Ind 1.35V K4B2G1646F-BMK0 Samsung
DDR3-1600 128Mx16 (2Gb) MT41K128M16JT-125:K Micron
DDR3-2133 256Mx16 (4Gb) K4B4G1646E-BCNB Samsung
DDR3-1866 512Mx16 (8Gb) 1.35V MT41K512M16VRP-107 AAT:P Micron
DDR3-1866 256Mx16 (4Gb) 1.35V K4B4G1646E-BYMA Samsung
DDR3-1866 256Mx16 (4Gb) 1.35V MT41K256M16TW-107 AAT:P Micron
DDR3-1866 256Mx16 (4Gb) H5TQ4G63CFR-RDC SK hynix
DDR3-1866 128Mx16 (2Gb) Ind 1.35V K4B2G1646F-BMMA Samsung
DDR3-1866 128Mx16 (2Gb) 1.35V K4B2G1646F-BYMA Samsung
DDR3-1866 128Mx16 (2Gb) H5TQ2G63GFR-RDC SK hynix
DDR2
DDR2-800 256Mx8 (2Gb) MT47H256M8EB-25E:C Micron
DDR2-800 64Mx16 Pb-Free K4T1G164QJ-BCE7 Samsung
DDR2-800 64Mx16 FBGA MT47H64M16NF-25E:M Micron
LPDDR4
LPDDR4-4266 1Gx32 (32Gb) MT53D1024M32D4DT-046 WT:D Micron
LPDDR4-3733 512Mx32 (16Gb) K4F6E3S4HM-MGCJ Samsung
LPDDR4-4266 512Mx32 (16Gb) MT53D512M32D2DS-046 AAT:D Micron
LPDDR4-4266 512Mx32 (16Gb) MT53E512M32D1ZW-046 WT:B Micron
LPDDR4-3733 x32 (8Gb) DDP H9HCNNN8KUMLHR-NME SK hynix
LPDDR4-3733 (8Gb) Ind DDP H9HCNNN8KUMLHR-NMI SK hynix
LPDDR4-4266 256Mx32 (8Gb) K4F8E3S4HD-MGCL Samsung
LPDDR4-3733 256Mx32 (8Gb) MT53E256M32D2DS-053 WT:B Micron
LPDDR4-4266 1Gx32 (32Gb) MT53E1G32D2FW-046 WT:B Micron
LPDDR4X-4266 x32 (32Gb) K4UBE3D4AB-MGCL Samsung
LPDDR4-4266 512Mx32 (16Gb) MT53E512M32D2DS-046 AAT: D Micron
LPDDR3
LPDDR3-1866 512Mx32 (16Gb) MT52L512M32D2PF-107 WT:B Micron
Mobile/Low-Power DDR (LPDDR)
LPDDR-400 64Mx8 Pb-Free MT46V64M8P-5B:J Micron
GDDR6 SDRAM/SGRAM
GDDR6 14Gb/s 512Mx32 (16Gb) K4ZAF325BM-HC14 Samsung
GDDR6 16Gb/s 512Mx32 (16Gb) K4ZAF325BC-SC16 Samsung
GDDR5 SDRAM/SGRAM
GDDR5 8Gb/s 256Mx32 (8Gb) K4G80325FC-HC25 Samsung
Mobile SDRAM (LPSDR)
SD-166 16Mx16 IT MT48LC16M16A2P-6A IT:G Micron
SD 4Mx16-75 PC166 Pb-Free MT48LC4M16A2P-6A IT:J Micron
SDRAM PC166
SD-200 16Mx16 (256Mb) Ind W9825G6KH-5I Winbond
SDRAM PC133
SD 8Mx16-H 133MHz CL3 Pb-Free H57V1262GTR-75C SK hynix
Synchronous Dynamic RAM (SDRAM)
SD 16Mx16-6A 166MHz Ind MT48LC16M16A2B4-6A IT:G Micron